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| Tensión - directo (Vf) (Max) Si @: | 1.4V @ 470A |
|---|---|
| Voltaje - Inverso (Vr) (máx): | 1400V (1.4kV) |
| Paquete del dispositivo: | DO-205AA (DO-8) |
| Velocidad: | Standard Recovery >500ns, > 200mA (Io) |
| Serie: | - |
| Tiempo de recuperación inversa (trr): | 7µs |
| embalaje: | Bulk |
| Paquete / Cubierta: | DO-205AA, DO-8, Stud |
| Temperatura de funcionamiento - Junction: | -65°C ~ 200°C |
| Tipo de montaje: | Chassis, Stud Mount |
| Tipo de diodo: | Standard |
| Corriente - Fuga inversa a Vr: | 30mA @ 1400V |
| Corriente - rectificada media (Io): | 150A |
| Capacitancia Vr, F: | - |
R5001610XXWA
DIODE GEN PURP 1.6KV 100A DO205
R5000
R5001215XXWA
DIODE GEN PURP 1.2KV 150A DO205
R5005CNX
MOSFET N-CH 500V 5A TO220
R5005CNJTL
MOSFET N-CH 10V DRIVE LPTS
R5000F
R5001410XXWA
DIODE GEN PURP 1.4KV 100A DO205
R5001615XXWA
DIODE GEN PURP 1.6KV 150A DO205
R5005CNJ TL
R5001210XXWA
DIODE GEN PURP 1.2KV 100A DO205
SIT1602BI-23-28N-33.330000E
-40 TO 85C, 3225, 50PPM, 2.8V, 3
SIT1602AC-12-33E-72.000000E
OSC XO 3.3V 72MHZ OE
SIT1602BC-22-28N-40.500000E
-20 TO 70C, 3225, 25PPM, 2.8V, 4
SIT1602BC-81-30S-66.000000T
-20 TO 70C, 7050, 20PPM, 3.0V, 6
SIT1602BC-31-33S-6.000000Y
-20 TO 70C, 5032, 20PPM, 3.3V, 6
SIT1602BC-31-33S-66.666600Y
-20 TO 70C, 5032, 20PPM, 3.3V, 6
SIT1602BI-11-28E-31.250000E
-40 TO 85C, 2520, 20PPM, 2.8V, 3
SIT8008BI-22-18E-90.000000D
OSC MEMS 90.0000MHZ LVCMOS SMD
TA-12.500MDE-T
OSC MEMS 12.50MHZ CMOS SMD
SIT1602BC-71-25S-66.000000G
-20 TO 70C, 2016, 20PPM, 2.5V, 6
